1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1,base 2,collector 3,emitter features surface mount type device making the following possible. reduction in the number of manufacturing processes for 2SC4600-applied equipment. high density surface mount applications. small size of 2SC4600-applied equipment. high breakdown voltage, high reliability. fast switching speed. wide aso. adoption of mbit process. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 500 v emitter-base voltage v ebo 7v collector current ( dc) i c 5 collector current (pulse) * i cp 10 base current i b 2a collector power dissipation ta = 25 1.65 t c =25 50 junction temperature t j 150 storage temperature range t stg -55to+150 *pw 300ms, duty cycle 10% p c a w sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC4600 smd type transistors smd type smd type smd type smd type product specification 4008-318-123
smd type transistors switching time test circuit electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 500 v, i e =0 10 a emitter cut-off current i ebo v eb =5v,i c =0 10 a v ce =5v,i c =0.6a 15 50 v ce =5v,i c =3a 8 gain-bandwidth product ft v ce =10v,i c =0.6a 18 mhz output capacitance cob v cb =10v,f=1mhz 80 pf collector-emitter saturation voltage v ce (sat) i c =3a,i b = 0.6 a 1.0 v base-emitter saturation voltage v be (sat) i c =3 a, i b = 0.6 a 1.5 v collector-base breakdown voltage v (br) cbo i c =1ma,i e = 0 800 v collector-emitter breakdown voltage v (br) ceo i c = 5 ma,rbe= 500 v emitter-to-base breakdown voltage v (br)ebo i e =1ma,i c =0 7 v v ceo(sus) i c =5a,i b1 =1a,l=50h 500 v v cex(sus) i c =2.5a,i b1 =-i b2 =1a,l=1mh 500 turn-on time ton 0.5 storage time t stg 3.0 fall time t f 0.3 dc current gain s h fe i c =4a,i b1 =0.8a,i b2 =-1.6a,r l =50 ,v cc =200v collector-to-emitter sustain voltage h fe classification rank l m n hfe 15to30 20to40 30to50 2SC4600 sales@twtysemi.com 2of 2 http://www.twtysemi.com smd type transistors smd type smd type smd type smd type product specification 4008-318-123
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